Subminiature led element and manufacturing method thereof

US9112112B2 · kind B2 · utility

Assignee

• PSI CO., LTD. · US

Inventors

• Young Rag Do · Seoul, KR
• Yeon Goog Sung · Goyang-si, KR

Key dates

• Filing date: Apr 27, 2012
• Grant date: Aug 18, 2015
• Expiry date: Apr 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/852

Abstract

Disclosed is a subminiature LED element and a manufacturing method thereof. The subminiature LED element includes a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, and a semiconductor light emission element of a micrometer or nanometer size including a second conductive semiconductor layer formed on the active layer, wherein the outer circumference of the semiconductor light emission element is coated with an insulation film. The manufacturing method includes 1) forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer in order on a substrate, 2) etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer so that the LED element has a diameter of a nanometer or micrometer level, and 3) forming an insulation film on the outer circumference of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer and removing the substrate. Therefore, a subminiature LED element of a nanometer or micrometer size may be effectively produced by combining a top-down manner and a bottom-up manner,…