Light emitting device having wavelength converting layer
US9112121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.