Dynamic MOSFET gate drivers
US9112498B2 · kind B2 · utility
2Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/33523
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The embodiments herein describe a dynamic metal-oxide-semiconductor field-effect transistor (MOSFET) gate driver system architecture and control scheme. The MOSFET gate driver system dynamically adjusts both the gate driver turn-on-resistance and the gate driver turn-off resistance within a single (i.e., one) switching cycle to reduce electromagnetic interference (EMI) in the system and to minimize the conduction loss of a power MOSFET during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.