Deposition and selective removal of conducting helplayer for nanostructure processing

US9114993B2 · kind B2 · utility

Assignee

• Smoltek AB · SE

Inventors

• Jonas BERG · Oslo, NO
• Vincent Desmaris · Gothenburg, SE
• Mohammad Shafiqul Kabir · Gothenburg, SE
• Muhammad Amin Saleem · Gothenburg, SE
• David Brud · Alvesta, SE

Key dates

• Filing date: Sep 18, 2014
• Grant date: Aug 25, 2015
• Expiry date: Sep 18, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.