Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same
US9115287B2 · kind B2 · utility
2Cited by
2References
6Claims
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Key dates
| Filing date | Nov 6, 2012 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jun 12, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/449
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.