Chemical sensor with sidewall sensor surface
US9116117B2 · kind B2 · utility
0Cited by
284References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Mar 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.