Method to extend data retention for flash based storage in a real time device processed on generic semiconductor technology
US9116830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2010 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Oct 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/1008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention is a method to extend data retention for FLASH based storage in a real time device embodied in generic semiconductor technology. This invention provides a manner to re-energize the Flash memory array to improve the retention characteristics of the memory without altering the clock cycle determinism of the system. Under certain conditions the Flash memory bit cells will lose their charge/non-charge over time. In this particular FLASH technology, an ECC is used to correct single bit errors within a 32 bit word. If there is time before multiple errors occur within a word, the single error cases are identified and “ReFlashed” to bring the value of the cell back to its “newly” programmed levels. This dramatically improves the long term retention characteristics of the memory while requiring some control logic and an area of non-volatile scratch/status information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.