Enhanced optical proximity correction (OPC) method and system
US9117053B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Oct 7, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Oct 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An enhanced optical proximity correction method is provided. The method includes providing a mask substrate and a substrate and obtaining a customer target pattern. The method also includes obtaining a production layout by performing an optical proximity correction process onto the customer target pattern using the pattern and a pattern formed on the substrate. Further, the method includes obtaining the light intensity information instead of dimension of the production layout. Further, the method includes storing the light intensity information of the production layout, the production layout and surrounding coherence radius in an optical proximity correction model database if the light intensity information of the production layout does not coincide with light intensity information of original modeling patterns already stored in the optical proximity correction model database. Further, the method also includes generating actual patterns using the stored optical proximity correction model corresponding to the stored light intensity information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.