Auto low current programming method without verify
US9117549B1 · kind B1 · utility
7Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5625
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device employs a low current auto-verification programming scheme using multi-step programming voltage and cell current detection. The low current auto-verification programming scheme performs programming of memory cells by the application of programming voltages in step increments. For each programming pulse, the cell current of the memory cell is sensed to determine when the memory cell is programmed. The programming pulse is terminated when the cell current decreases below a reference current level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.