Method of selective growth without catalyst on a semiconducting structure
US9117674B2 · kind B2 · utility
2Cited by
1References
18Claims
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Key dates
| Filing date | Apr 3, 2012 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Apr 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.