Semiconductor integrated circuit having a resistor and method of forming the same
US9117677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2011 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jan 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a semiconductor integrated circuit including a substrate having electrical devices formed thereon, a local interconnection layer formed over the substrate, and a global interconnection layer formed over the local interconnection layer. The local interconnection layer has a first set of conductive structures arranged to electrically connect within the individual electrical devices, among one of the electrical devices and its adjacent electrical devices, or vertically between the devices and the global interconnection layer. At least one of the first set of conductive structures is configured to have a resistance value greater than 50 ohms. The global interconnection layer has a second set of conductive structures arranged to electrically interconnect the electrical devices via the first set conductive structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.