Thin-film transistor active device
US9117705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2012 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a thin-film transistor (TFT) active device. The TFT active device includes: a gate electrode; a gate insulation layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulation layer; a first protection layer formed on the oxide semiconductor layer; a source/drain electrode electrically connected with the oxide semiconductor layer; and a second protection layer covering the source/drain electrode. At least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0. The TFT active device according to the present invention helps suppressing diffusion of metal ions from a metal electrode and reducing hydrogen content of the GI layer, the ES layer, or the PV layer so as to effectively improve the stability of the manufacture operation of TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.