Demodulation pixel with backside illumination and charge barrier
US9117712B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2010 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | May 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A high-speed, high-sensitivity demodulation sensor usable for e.g. time-of-flight application uses a back side illuminated (BSI) image sensor chip, in which the photo-generated charges are first transferred to a demodulation area, from which the charges are then sampled and stored on at least one specific storage node. The storage node is electrically isolated from the sensitive area. Such a pixel might find its use specifically in 3D time-of-flight imaging given its improvements in sensitivity because the presented invention allows to design pixel with up to 100% fill factor and enables charge detection even if the charge generation by the photon occurs deep in the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.