Image sensors including hydrophobic interfaces and methods of fabricating the same
US9117716B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Jun 3, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jun 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.