Patent · US Active

Process for manufacturing a semiconductor device and an intermediate product for the manufacture of a semiconductor device

US9117753B2 · kind B2 · utility

1Cited by

4References

20Claims

0Family size

Assignee

Acconeer AB · SE

Inventors

Mikael Egard · Lund, SE
Erik Lind · Lund, SE
Lars-Erik Wernersson · Lund, SE

Key dates

Filing date	Jun 1, 2012
Grant date	Aug 25, 2015
Priority date	—
Expiry date	Jun 1, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to one aspect of the inventive concept there is provided a process for manufacturing a semiconductor device, comprising: providing a channel layer (104), providing a mask (106) on the channel layer, epitaxially growing a contact layer (108) in contact with the channel layer, epitaxially growing a support layer (110) on the contact layer, wherein the support layer is arranged to be etched at a higher rate than the contact layer, forming a trench extending through the support layer by removing the mask, and providing a conductor (118) in the trench. There is also provided an intermediate product for the manufacture of a semiconductor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.