Fin field-effect transistors and fabrication method thereof

US9117906B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Mieno Fumitake · Shanghai, CN
• Huaxiang Yin · Beijing, CN

Key dates

• Filing date: Apr 12, 2013
• Grant date: Aug 25, 2015
• Expiry date: Jul 31, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate, and forming a plurality of fins with hard mask layers and an isolation structure. The process also includes forming a first dummy gate layer on the fins and the isolation structure, and polishing the first dummy gate layer until the hard mask layer is exposed. Further, the method includes removing the hard mask layer to expose a top surface of the fins, and forming a second dummy gate material layer on the first dummy gate material layer. Further, the method also includes etching the second dummy gate layer and the first dummy gate layer to form a dummy gate on each of the fins.