Thin film transistor, pixel structure and method for fabricating the same
US9117915B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jan 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6756
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor (TFT) that includes a gate, an oxide semiconductor layer, a gate insulator, a source, and a drain is provided. The gate insulator is located between the oxide semiconductor layer and the gate. The source and the drain are in contact with different portions of the oxide semiconductor layer. Each of the source and the drain has a ladder-shaped sidewall that is partially covered by the oxide semiconductor layer. A method for fabricating the above-mentioned TFT is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.