Magnetic memory element and method of manufacturing the same

US9117924B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Eiji Kitagawa · Seoul, KR
• Chikayoshi Kamata · Kawasaki, JP
• Saori Kashiwada · Yokohama, JP
• Yushi Kato · Chofu, JP
• Tadaomi Daibou · Yokohama, JP

Key dates

• Filing date: Dec 28, 2012
• Grant date: Aug 25, 2015
• Expiry date: Jan 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.