Magnetoresistance element and magnetic memory

US9117995B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tadaomi Daibou · Yokohama, JP
• Eiji Kitagawa · Seoul, KR
• Chikayoshi Kamata · Kawasaki, JP
• Saori Kashiwada · Yokohama, JP
• Yushi Kato · Chofu, JP
• Megumi Yakabe · Ota, JP

Key dates

• Filing date: Sep 11, 2013
• Grant date: Aug 25, 2015
• Expiry date: Dec 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.