Patent · US Active

VCSEL and manufacturing method of the same

US9118160B2 · kind B2 · utility

2Cited by

4References

12Claims

0Family size

Assignee

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

Hyundai Park · Goleta, US
Gyungock Kim · Daejeon, KR

Key dates

Filing date	Mar 3, 2014
Grant date	Aug 25, 2015
Priority date	—
Expiry date	Mar 3, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/0215
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.