Nanoimprint resist, nanoimprint mold and nanoimprint lithography
US9120265B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Nov 28, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 5, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31855
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.