Patent · US Active

Magnetoresistive sensor including an amorphous insertion layer excluding glass former elements

US9121886B2 · kind B2 · utility

5Cited by
3References
8Claims
0Family size

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Key dates

Filing dateSep 25, 2013
Grant dateSep 1, 2015
Priority date
Expiry dateSep 25, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/098
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.