Mask layout patterns for closely spaced primitives in phase shift photolithography masks
US9122169B2 · kind B2 · utility
3Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 29, 2011 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Dec 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Improved mask layout patterns are described for closely spaced primitives in phase shift photolithography masks. In one example, at least a portion of a photolithography mask layout is decomposed into primitives. Jogs are identified from among the primitives, the jogs being characterized by three adjacent corners. E-fields are determined for the identified jogs and are applied to synthesize an electric field at a substrate. The mask layout is corrected using the synthesized electric field and a printed wafer pattern is calculated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.