Optical touch device and method of forming photo sensor
US9122352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.