Method of designing fin field effect transistor (FinFET)-based circuit and system for implementing the same
US9122833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of designing a fin field effect transistor (FinFET)-based circuit includes designing, using a processor, a first circuit schematic design based on a performance specification, the first circuit schematic design is free of artificial elements, wherein the artificial elements are used to simulate electrical performance of the FinFET-based circuit. The method further includes modifying, using the processor, at least one device within the first circuit schematic design to form a second circuit schematic design taking the artificial elements into consideration. The method further includes performing a pre-layout simulation using the second circuit schematic and taking the artificial elements into consideration. The method further includes generating a layout, wherein the layout does not take the artificial elements into consideration, and performing a post-layout simulation, wherein the post-layout simulation does not take the artificial elements into consideration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.