Non-volatile phase-change resistive memory
US9123416B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Sep 10, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for implementing a system containing at least one memory device including a plurality of non-volatile memory cells each including a phase-change material configured to change state reversibly between at least an amorphous state and a crystalline state having different electrical resistances. The method includes steps of manufacturing the memory cells, including the formation of a layer of a phase-change material having an original amorphous state at the end of the steps of manufacturing the memory cells. The method for implementing the embedded system includes, after the steps of manufacturing the memory cells, at least the following steps: (i) pre-programming the memory device consisting of an electrical recrystallization of a selection of memory cells from their original amorphous state; and (ii) assembling the pre-programmed memory device in the system during which the device is subjected to a temperature of between 240° C. and 300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.