Patent · US Active

Silicon nanocrystal inks, films, and methods

US9123538B2 · kind B2 · utility

3Cited by

4References

29Claims

0Family size

Assignee

Regents of the University of Minnesota · US

Inventors

Lance Michael Wheeler · Minneapolis, US
Uwe Kortshagen · Roseville, US

Key dates

Filing date	Apr 25, 2013
Grant date	Sep 1, 2015
Priority date	—
Expiry date	Jul 27, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/00
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.