Bipolar junction transistor
US9123558B2 · kind B2 · utility
6Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | May 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter region; a collector region; and a second isolation between the base region and the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.