Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices
US9123611B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Apr 26, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for designing a completely passive bias compensation circuit to stabilize the gain of multiple pixel avalanche photo detector devices. The method includes determining circuitry design and component values to achieve a desired precision of gain stability. The method can be used with any temperature sensitive device with a nominally linear coefficient of voltage dependent parameter that must be stabilized. The circuitry design includes a negative temperature coefficient resistor in thermal contact with the photomultiplier device to provide a varying resistance and a second fixed resistor to form a voltage divider that can be chosen to set the desired slope and intercept for the characteristic with a specific voltage source value. The addition of a third resistor to the divider network provides a solution set for a set of SiPM devices that requires only a single stabilized voltage source value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.