Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors
US9123750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Sep 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.