Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head
US9123752B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/2047
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.