Transistors and electronic devices including the same
US9123817B2 · kind B2 · utility
3Cited by
0References
23Claims
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Key dates
| Filing date | Apr 28, 2011 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Jan 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.