Electrode for oxide semiconductor, method of forming the same, and oxide semiconductor device provided with the electrode
US9123821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.