Single-chip bridge-type magnetic field sensor and preparation method thereof
US9123877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Apr 1, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.