Magnetic memory device utilizing magnetic domain wall motion
US9123878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a magnetic thin wire including magnetic domains along a direction in which the magnetic thin wire extends. Magnetization directions of the magnetic domains are variable. A magnetic tunnel junction (MTJ) structure includes a pinned layer with a fixed magnetization direction and an insulator, and makes an MTJ including the pinned layer and insulator and a magnetic domain in the magnetic thin wire in a first position to sandwich the insulator with pinned layer. First and second electrodes are at both ends of the magnetic thin wire. At least one third electrode is coupled to the magnetic thin wire between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.