Patent · US Active

Magnetic electronic device

US9123887B2 · kind B2 · utility

5Cited by

1References

7Claims

0Family size

Assignee

NATIONAL TSING HUA UNIVERSITY · TW

Inventors

Chih-Huang Lai · Baoshan, TW
Ding Wang · Beijing, CN

Key dates

Filing date	Oct 25, 2013
Grant date	Sep 1, 2015
Priority date	—
Expiry date	Oct 25, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/80
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.