Patent · US Active

CPP-type magnetoresistance effect element and magnetic disk device

US9129622B2 · kind B2 · utility

1Cited by
1References
13Claims
0Family size

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Key dates

Filing dateMar 15, 2013
Grant dateSep 8, 2015
Priority date
Expiry dateApr 10, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/10
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.