Resistive memory devices and methods of operating the same
US9129675B2 · kind B2 · utility
2Cited by
15References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.