Patent · US Active

Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers

US9129801B2 · kind B2 · utility

2Cited by

0References

15Claims

0Family size

Assignee

BASF SE

Inventors

Friederike Fleischhaker · Ludwigshafen, DE
Imme Domke · Mannheim, DE
Andrey Karpov · Metuchen, US
Marcel Kastler · Mannheim, DE
Veronika Wloka · Mannheim, DE
Lothar Weber · Stuttgart, DE

Key dates

Filing date	Jun 15, 2010
Grant date	Sep 8, 2015
Priority date	—
Expiry date	Jan 7, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02628
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.