Patent · US Active

Method of fabricating a FinFET device

US9129839B2 · kind B2 · utility

3Cited by

6References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Ming-Feng Shieh · Yongkang, TW
Chen Chen · Champaign, US

Key dates

Filing date	Sep 4, 2014
Grant date	Sep 8, 2015
Priority date	—
Expiry date	Sep 4, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate and a plurality of fin structures. A first fin structure and a second fin structure are spaced at a distance D1. A first dummy fin structure is adjacent to the first fin structure, and a second dummy fin structure is adjacent to the second fin structure. The device further includes an isolation layer over the substrate and the first and second dummy fin structures, and surrounding the first and second fin structures. The fin structures are arranged such that a distance D2 between the first fin structure and the first dummy fin structure is greater than the distance D1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.