Method of fabricating graphene nano device
US9129882B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 29, 2014 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a graphene nano device. The method includes forming a first metal mask pattern on a substrate on which a graphene layer is formed, and forming a graphene pattern by performing an etching process on the graphene layer using the first metal mask pattern as an etching mask. The forming of the first metal mask pattern includes forming a first adhesive layer on the graphene layer, disposing the first metal mask pattern prepared in advance on the first adhesive layer, and heating the first adhesive layer to attach the first metal mask pattern on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.