Polishing method of non-oxide single-crystal substrate
US9129901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Oct 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.