Onium-containing CMP compositions and methods of use thereof
US9129907B2 · kind B2 · utility
3Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2006 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | May 29, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.