FinFET semiconductor device and method of manufacturing the same
US9130040B2 · kind B2 · utility
3Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2014 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Apr 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
Provided are a semiconductor device and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an active fin on a substrate; oxidizing a portion of the active fin to form an insulating pattern between the active fin and the substrate; forming a first gate pattern on the substrate, wherein the first gate pattern crosses the active fin; exposing the substrate on both sides of the first gate pattern; and forming source/drain regions on the exposed substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.