Thin film transistor and method for fabricating the same
US9130042B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Dec 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Disclosed is a thin film transistor and a method of fabricating the same which includes a light-shielding layer made of the same material as a semiconductor layer on a substrate, wherein the light-shielding layer absorbs light incident upon the semiconductor layer, thereby preventing deterioration in characteristics of the thin film transistor caused by exterior light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.