Amorphous oxide and field effect transistor
US9130049B2 · kind B2 · utility
91Cited by
29References
2Claims
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Key dates
| Filing date | Jun 20, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.