Semiconductor light receiving device and light receiving apparatus
US9130083B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Nov 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.