Photoresistor

US9130104B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• HON HAI PRECISION INDUSTRY CO., LTD. · TW

Inventors

• Jun-Ku Liu · Beijing, CN
• Guan-Hong Li · Beijing, CN
• Qun Li · Beijing, CN
• Shou-Shan Fan · Beijing, CN

Key dates

• Filing date: Apr 8, 2013
• Grant date: Sep 8, 2015
• Expiry date: Dec 17, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure.