Method for manufacturing solar cell and dopant layer thereof
US9130112B2 · kind B2 · utility
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3References
18Claims
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | May 1, 2033 |
Classification
- Technology area (CPC —)General
Abstract
A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.