Semiconductor light emitting device and method for manufacturing same

US9130134B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Satoshi Mitsugi · Kawasaki, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Feb 28, 2013
• Grant date: Sep 8, 2015
• Expiry date: Feb 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/813

Abstract

According to one embodiment, a semiconductor light emitting device includes: a stacked body and an insulative optical path control section. The stacked body includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the light emitting layer are stacked along a stacking direction. The insulative optical path control section penetrates through the second semiconductor layer and the light emitting layer, has a refractive index lower than refractive index of the first semiconductor layer, refractive index of the second semiconductor layer, and refractive index of the light emitting layer. The insulative optical path control section is configured to change traveling direction of light emitted from the light emitting layer.